South Korean tech giant Samsung has announced a new 16TB Next Generation Small Form Factor (NGSFF) solid-state drive (SSD), which aims to significantly improve server storage capacity and tackle data processing challenges.
According to a company release, as well as increasing memory capacity, the new SSD will enable an improvement in IOPS (input/output operations per second).
The firm noted that the NGSFF SSD, which measures 30.5mm x 110mm x 4.38mm, will allow four times greater memory capacity than a 1U chassis which uses an M.2 drive.
Samsung believes that these NGSFF capabilities will provide hyperscale data centres with significantly improved space utilisation and scaling options.
The company demonstrated the technology using a reference server system which delivers 576TB in a 1U rack, using 36 16TB NGSFF SSDs. Samsung added that a petabyte capacity can be achieved using just two of these 576TB systems.
In addition, Samsung also revealed its SZ985 – an SSD based on Z-SSD technology for data centres and enterprise systems which are processing huge data-intensive tasks, such as big data analytics and high-performance computing.
The product offers 15 microseconds of read latency time, which is about a seventh of the time delivered by an NVME SSD.
‘At the application level, the use of Samsung’s Z-SSDs can reduce system response time by up to 12 times, compared to using NVMe SSDs,’ said Samsung.
The company also unveiled a new 1Tb V-NAND memory chip to be used for commercial SSDs from 2018.
The new chip will enable 2TB of memory in a single V-NAND package by stacking 16 1Tb dies. Samsung claims that the breakthrough represents one of the most important memory advances of the last decade.
‘We will continue to pioneer flash innovation by leveraging our expertise in advanced 3D-NAND memory technology to significantly enhance the way in which information-rich data is processed,’ commented Gyoyoung Jin, executive vice president and head of Samsung’s memory business.